Material Characterization Lab

Introduction

The University of Missouri – Kansas City (UMKC), Missouri Institute of Defense and Energy (MIDE), Material Characterization Lab (MCL) provides state-of-the-art instruments for nanometer-scale characterization of material surface chemistry and physical properties.

The specific aim of the MCL are to: perform world-class research; educate students in the relevant scientific and engineering disciplines; promote interdisciplinary group and single-investigator grants to improve the university’s national research competitiveness. To accomplish these goals the MCL facilities are open to all UMKC researchers as well as external researchers.

Instrumentation

Atomic Force Microscope (AFM) provides 3 dimensional topographic information about a sample by probing its surface structure with a very sharp tip. The tip is scanned laterally across the surface, and the vertical movements of the tip are recorded and used to construct a quantitative 3 dimensional topographic map. The lateral resolution of the image can be as small as the tip radius (typically 5-15 nm), and the vertical resolution can be on the order of angstroms.

Technique Advantages
  • Quantitative topographical information at high resolution
  • Little or no sample prep in many cases
  • Little to no harm to sample
  • Applicable to conductive and insulating materials
Typical Applications
  • High-resolution surface profilometry
  • Surface roughness measurements
  • Microstructural studies of metallic, ceramic, semiconducting and polymeric materials
  • Defect and failure analysis
  • Pit analysis for optical disk storage media
  • Magnetic domain and surface roughness analysis for computer hard-disks
  • Semiconductor device structural analyses
  • Surface cleaning and polishing studies
  • Critical Dimension Measurements
  • Investigation of local mechanical properties
  • Studies of nano-scale forces
Bruker MultiMode8 HR

The MultiMode 8 performs a full range of SPM techniques for surface characterization of properties like topography, elasticity, friction, adhesion, and electrical and magnetic fields.

System details:

  • Sample Size: 15 mm diameter x 5mm thick
  • Imaging Noise Level: ‹0.3Å RMS (Z noise using TappingMode in air at zero scan size)
  • Modes:
    • TappingMode AFM
    • Contact Mode AFM
    • PeakForce Tapping™
    • ScanAsyst
    • Lateral Force Microscopy (LFM)
    • Magnetic Force Microscopy (MFM)
    • Force Modulation
    • Electric Force Microscopy (EFM)
    • Surface Potential Microscopy
    • PicoForce Force Spectroscopy
    • Tunneling AFM (TUNA)
    • Conductive AFM (CAFM)

Location: FH274

Bruker MultiMode8 HR

When IR radiation is passed through a sample, some radiation is absorbed by the sample and some passes through (is transmitted). The resulting signal at the detector is a spectrum representing a molecular ‘fingerprint’ of the sample. The usefulness of infrared spectroscopy arises because different chemical structures (molecules) produce different spectral fingerprints. The Fourier Transform converts the detector output to an interpretable spectrum.

Typical Applications
  • Identification of simple mixtures of organic and inorganic compounds both as solids or liquids.
  • Identification of polymers and polymer blends.
  • Indirect verification of trace organic contaminants on surfaces.
  • Routine qualitative & quantitative FTIR Analysis.
  • Thin film analysis.
  • Analysis of adhesives, coatings and adhesion promoters or coupling agents.
  • Small visible particle chemical analysis.
  • Analysis of stains and surface blemishes remnant from cleaning and degreasing processes combined with optical microscopy, SEM/EDX, XPS and SIMS techniques.
  • Analysis of resins, composite materials and release films.
  • Solvent extractions of leachables or contaminants, plasticisers, mould release agents and weak boundary layers coupled with XPS surface chemical analysis techniques.
  • Identification of rubbers and filled rubbers.
  • Determination of degrees of crystallinity in polymers (eg LDPE and HDPE).
  • Compararive chain lengths in organics.
  • Extent of thermal, UV or other degredation or depolymerisation of polymers and paint coatings.
  • Analysis of unknown solvents, cleaning agents and detergents.
  • Assessment of degradation and oxidation of polymers.
Bruker FT-IR Spectrometer, Equinox 55 Model

System details:

  • Operation range 7500-370 cm-1
    • maximal performance in mid-IR (MIR, 4000-400 cm-1)
  • Resolution 0.5 cm-1
  • IR Source: Globar (MIR)
  • Detector: DLATGS with KBr window

Location: FH274

Bruker FT-IR Spectrometer, Equinox 55 Model

Ellipsometry measures the change in polarization of reflected or transmitted light. As such, it is primarily used to look at film thickness, roughness, and optical constants.

Typical Applications
  • Dielectric films
  • Transparent films
  • Absorbing films
  • Coating on glass
Woollam Alpha-SE

With fast measurement speed and push-button operation, the alpha-SE is ideal for qualifying thin films. Single-layer dielectrics on silicon or glass substrates can be measured in seconds. Log results for easy-to-use comparisons in both graphical and tabular formats. Advanced models provide quick and efficient fits for a wide variety of materials you may encounter. Patented technology allows accurate measurements on any substrate: metal, semiconductor, or glass. On transparent substrates, the alpha-SE measures depolarization to correct for light returning from the backside of the substrate. This unwanted light can confuse other ellipsometers, but the alpha-SE ensures accurate optical constants.

System details:

  • Wavelength range: 380-900 nm
  • Number of Wavelengths: 180
  • Angles of Incidence: 65°, 70°, 75°, and 90° (straight-through)
  • Data Acquisition Rate (Complete Spectrum)
    • 3 s – Fast mode
    • 10 s – Standard mode
    • 30 s – High-precision mode
  • Beam diameter
    • Collimated: ~ 3 mm
    • Focused: ~0.3 mm

Location: FH274

Woollam Alpha-SE

UV-Vis spectroscopy is a powerful analytical technique to determine the optical properties (transmittance, reflectance and absorbance) of liquids and solids. It can be applied to characterize semiconductor materials, coatings, glass and many other research and manufacturing materials. UV-Vis operates in the optical range between 190 nm to 1100 nm.

HP 8453 UV-Vi Spectrophotometer

The HP 8453 includes both a tungsten and a deuterium lamp which collectively cover the range from 190 nm to 1100 nm. The instrument includes a standard 1 cm x 1 cm quartz cuvette holder as well as an eight-cell, multicell transport.

System details:

  • Wavelength range: 190-1100 nm
  • Slit width: 1 nm
  • Resolution: > 1.6
  • Stray light:
    • ‹ 1.0%
      • At 200 nm, solution of 1.2% KCl, blank scan on air, 5 s integration time
    • ‹ 0.05%
      • At 220 nm, solution of 10 g/l NaI, blank scan on air, 5 s integration time
    • ‹ 0.03%
      • At 340 nm, solution of 50 g/l NaNO2, blank scan on air, 5 s integration time
  • Wavelength accuracy: ‹ ± 0.5 nm
  • Wavelength reproducibility: < ± 0.02 nm
  • Photometric accuracy: ‹ ± 0.005 AU
  • Typical scan time: 1.5 s
  • Shortest scan time: 0.1 s
  • Time until next scan: 0.1 s

Location: FH274

HP 8453 UV-Vi Spectrophotometer

X-ray photoelectron spectroscopy is a surface-sensitive spectroscopy technique which provides valuable quantitative and chemical state information from the material being studied. This technique is based on the Photoelectric Effect. When a material is irradiated with x-rays, photoelectrons are subsequently ejected from atoms in the near surface. The kinetic energy of an emitted photoelectron is equal to the difference between the photon energy, and the binding energy of the electron (K.E. = hν - B.E.). The technique is inherently surface sensitive because the x-ray energy is low (‹1,500 eV). The majority of the signal detected originates from the outer 1-10 nm of a sample. The spectra contain information about the elemental composition, concentrations and chemical environments (i.e. oxidation states) of surface and near surface atoms. The analyses are non-destructive for many, but not all materials.

Typical Applications
  • Thin film and coatings
  • Surface functionalization
  • Polymers and adhesives
  • Mineralogy, geochemistry, and petrochemistry
  • Metallurgy
  • Catalysis
  • Microelectronics and semiconductors
  • Surface characterization of solids.
Kratos Axis Ultra DLD

With fast measurement speed and push-button operation, the alpha-SE is ideal for qualifying thin films. Single-layer dielectrics on silicon or glass substrates can be measured in seconds. Log results for easy-to-use comparisons in both graphical and tabular formats. Advanced models provide quick and efficient fits for a wide variety of materials you may encounter. Patented technology allows accurate measurements on any substrate: metal, semiconductor, or glass. On transparent substrates, the alpha-SE measures depolarization to correct for light returning from the backside of the substrate. This unwanted light can confuse other ellipsometers, but the alpha-SE ensures accurate optical constants.

System details:

  • Capabilities:
    • Single-point spectra
    • Line profiles
    • Area chemical maps
    • Depth profiles
    • UPS
  • X-ray Source:
    • Monochromatic Al Kα (1.486 KeV)
    • Non-monochromatic dual anode Al Kα and Mg Kα (1.253 KeV)
  • Sputter Source: Ar+ ion gun with ion energy selectable from 500 to 4000 eV
  • Analysis Area (spot size):
    • Hybrid mode: 700x300 μm
    • Small spot modes: 15, 27, 55, 110 μm
  • Imaging: predetermined analysis areas of 200, 400, 800 μm, and 2 mm
  • Detection Limits:
    • Sensitive to elements with Z ≥ 2 (all elements except for H and He)
    • Typical minimum detectable concentrations: 0.1 – 1 % (atomic)
    • Typical qualification error: 10 %
    • Resolution (imagining): 3 μm
  • Maximum Sample Dimensions By Mounting Method (width x length x thickness):
    • Stub: 25 x 40 x 4 (mm)
    • Standard Bar: 24 x 100 x 4 (mm)
    • Constant Height Bar: 25 x 30 x 8 (mm)

Location: FH208

Kratos Axis Ultra DLD

For Information or to request work, contact Michelle Paquette.

Missouri Institute for Defense & Energy

Flarsheim Hall, Room 251
5110 Rockhill Road, Kansas City, MO 64110

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